Basic Study of Dead-Timeless Control Technology for SiC-MOSFET Applying Current Detection Circuit Using Wiring Inductance of Semiconductor Device
Author:
Affiliation:
1. Hitachi Astemo, Ltd.
2. National Institute of Technology, Ibaraki College
3. Hitachi, Ltd. Research & Development Group
4. Hitachi, Ltd. Railway System Business Unit
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Link
https://www.jstage.jst.go.jp/article/ieejias/141/7/141_532/_pdf
Reference14 articles.
1. (1) K. Sato, H. Kato, and T. Fukushima: “Development of SiC Applied Traction System for Next-Generation Shinkansen High-Speed Trains”, IEEJ Journal of Ind. Appl., Vol. 9, No. 4, pp. 453-459 (2020)
2. (2) S. Kinouchi: “SiC Power Devices”, J. IEIE Jpn., Vol. 32, No. 12, pp. 889-892 (2012) (in Japanese)
3. 木ノ内伸一：「SiCパワーデバイス」, 電設学誌, Vol. 32, No. 12, pp. 889-892 (2012)
4. (3) K. Nanamori, T. Harada, H. Umegami, and M. Yamamoto: “Examination of Recovery Suppression Method with the Parallel Connection SiC SBD”, Journal of the Japan Institute of Power Electronics, Vol. 40, pp. 76-83 (2014) (in Japanese)
5. 七森公碩・原田敏和・梅上大勝・山本真義：「SiC SBDの並列接続リカバリ抑制手法の検討」, パワーエレクトロニクス学会誌, Vol. 40, pp. 76-83 (2014)
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