Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules-Reference-Cited by-同舟云学术

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Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules

Published:2021-10-09 Issue:4 Volume:214 Page:
ISSN:0424-7760
Container-title:Electrical Engineering in Japan
language:en
Short-container-title:Electrical Engineering Japan

Author:

Katoh Miyu¹,Nagasu Masahiro²,Suzuki Sosuke³,Inaba Masamitsu⁴,Ishikawa Katsumi⁵

Affiliation:

1. Hino Campus Tokyo Metropolitan University Asahigaoka Hino‐shi Tokyo Japan

2. National Institute of Technology Ibaraki College Nakane Hitachinaka Ibaraki Japan

3. Graduate School of Information Science and Technology Hokkaido University Kita‐ku Sapporo Hokkaido Japan

4. Hitachi Power Semiconductor Device, Ltd. Omika‐cho Hitachi Ibaraki Japan

5. Railway System Business Unit Hitachi, Ltd. Soto‐kanda Chiyoda‐ku Tokyo Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/eej.23351

Reference13 articles.

1. Study on Gate-Controlled Protection Methods for IGBTs Under A Short-Circuit Condition

2. An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions

3. Development of fast short-circuit protection system for advanced IGBT

4. Tunnel Magnetoresistance-Based Short-Circuit and Over-Current Protection for IGBT Module

5. A Dead-Time-Controlled Gate Driver Using Current-Sense FET Integrated in SiC MOSFET

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