Circuit Simulation Method for Insulated-Gate Bipolar Transistor Short-Circuit Operation with High Accuracy
Author:
Affiliation:
1. DENSO CORPORATION
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Link
https://www.jstage.jst.go.jp/article/ieejias/142/12/142_954/_pdf
Reference11 articles.
1. (1) D. Cavaiuolo, M. Riccio, L. Maresca, A. Irace, G. Breglio, D. Dapra, C. Sanfilippo, and L. Merlin: “A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design”, Microelectronics Reliability, Vol. 55, No. 9-10, pp. 1971-1975 (2015)
2. (2) S. Okamoto, T. Horiguchi, S. Tominaga, T. Nishimura, H. Fujita, H. Akagi, and S. Kinouchi: “An Application of a Physics-based IGBTModel to a Protection Circuit for Short-Circuit Conditions”, IEEJ Trans. IA, Vol. 134, No. 10, pp. 853-862 (2014)
3. (3) A. O. Adan, D. Tanaka, L. Burgyan, and Y. Kakizaki: “The Current Status and Trends of 1,200-V Commercial S ilicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer's Perspective”, IEEE Power Electronics Magazine, Vol. 6, No. 2, pp. 36-47 (2019)
4. (4) H. Sakairi, T. Yanagi, H. Otake, N. Kuroda, H. Tanigawa, and K. Nakahara: “Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges”, IEEE Transactions on Power Electronics, Vol. 33, No. 9, pp. 7314-7325 (2018)
5. (5) Y. Nakamura, M. Shintani, T. Sato, and T. Hikihara: “A High Power Curve Trace for Characterize Full Operational Range of SiC Power Transistors”, IEEE International Conference on Microelectronic Test Structures, pp. 90-94 (2016)
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