Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges-Reference-Cited by-同舟云学术

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Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges

Published:2018-09 Issue:9 Volume:33 Page:7314-7325
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Sakairi Hiroyuki^ORCID,Yanagi Tatsuya^ORCID,Otake Hirotaka^ORCID,Kuroda Naotaka,Tanigawa Hiroaki^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/8400452/08094006.pdf?arnumber=8094006

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures;IEEE Transactions on Power Electronics;2024-11

2. A Gate Degradation Independent Online Junction Temperature Estimation Method for SiC MOSFETs Based on Residual Resistance;IEEE Transactions on Power Electronics;2024-10

3. Driving force for enhancing the cold silver sinter joining using time domain-dependent Ag–Au epitaxy and interfacial stress;Materials Science and Engineering: A;2024-09

4. Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors;IEEE Transactions on Power Electronics;2024-09

5. Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations;Solid State Phenomena;2024-08-23

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