PHOTOCONDUCTIVITY IN INDIUM-DOPED SILICON

Abstract

Impurity photoconductivity has been studied in silicon doped with indium, at various temperatures in the range 63–90°K. The long wave limit of spectral response and analysis of the bulk electrical properties both confirm an ionization energy of 0.16 ev. for the indium centers. An apparent variation of quantum efficiency in the range 5–8 μ is noted and discussed. The magnitude of the photoconductive response suggests an effective recombination coefficient of about 10−6 cm.3/sec. at 90°K., rising steeply on further cooling. This demands a much more active recombination mechanism than present theories provide.