Deep level transient spectroscopy studies of trapping parameters for centers in indium‐doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329416
Reference12 articles.
1. A new acceptor level in indium‐doped silicon
2. Infrared spectra of new acceptor levels in indium‐ or aluminum‐doped silicon
3. Nature of the 0.111‐eV acceptor level in indium‐doped silicon
4. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
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1. Analysis of the relationship between the kink effect and the indium levels in MOS transistors;Materials Science and Engineering: B;2013-12
2. Investigation of the kink effect in indium-doped silicon for sub 100 nm N channel MOSFET technology;International Journal of Nanotechnology;2013
3. Impact of Direct Plasma Hydrogenation on Thermal Donor Formation in n-Type CZ Silicon;Journal of The Electrochemical Society;2005
4. Energetics and diffusivity of indium-related defects in silicon;Physical Review B;2004-02-27
5. Dopants;Computational Microelectronics;2004
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