THE TEMPERATURE DEPENDENCE OF THE HALF-WIDTHS OF INTERNAL ABSORPTION LINES IN BORON-DOPED SILICON

Abstract

For boron-doped silicon at temperatures less than 60 °K, half-width measurements for those absorption peaks corresponding to transitions from the ground state to the 2P′ and 3P′ internal states are presented. These half-widths are attributed to concentration and electron–phonon lifetime effects. The major contribution to the phonon broadening appears to be due to electron–phonon coupling of the internal states to the P3/2 Bloch states.