Optical Study of Silicon Doubly Doped with Boron and Indium Acceptors

Abstract

The external and internal absorption spectra of silicon doubly doped with boron and indium acceptors is studied. The observed broadening of the boron absorption lines in Si(B, In) is explained by neutral impurity scattering. The presence of indium in the Si(B, In) crystal lattice modifies the valence band Bloch states and hence the configuration interaction between the internal acceptor states and the degenerate P3/2 valence band Bloch states. This modification is found responsible for the observed features of the boron 2p′ internal line in Si(B, In).