The puzzle of double-doped Si(B, In): Sharp line series in near-band-edge photoluminescence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
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4. Bound-exciton absorption in Si:Al, Si:Ga, and Si:In
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1. Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect;AIP Advances;2015-01
2. Chapter 8 Luminescence from optical defects and impurities in CVD diamond;Thin-Film Diamond I;2003
3. Chapter 3 Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices;Semiconductors and Semimetals;1997
4. Sharp line donor-acceptor recombination in Mn-implanted GaAs;Solid State Communications;1990-10
5. Photoluminescence study of impurity states in aluminum antimonide;Journal of Applied Physics;1990-02
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