Author:
Bhatia K. L.,Bichard J. W.
Abstract
The effect of the interaction between a quasi-discrete state and an overlapping continuum of states has been identified in the experimental investigation of the internal acceptor states of Group III impurities in silicon. The effect of the impurity–impurity interaction on the line shape of the boron, gallium, and indium internal acceptor lines has been studied. The observed characteristic asymmetric line shape is explained by introducing the interaction of the internal state with the degenerate P3/2 valence band Bloch states, and the inhomogeneous impurity–impurity interaction. The ionization energy of the substitutional impurity in the host lattice is found to be a deciding factor in this interaction. An estimate of the nonstationary lifetime for the boron internal state, 2p′, has also been made.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
3 articles.
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