About the simulation of primary grown-in microdefects in dislocation-free silicon single-crystal formation

Abstract

A mathematical model of primary grown-in microdefects formation is proposed. The model is built on the basis of the dissociative process of diffusion. Here, we study the interaction patterns between oxygen-vacancy (O + V) and carbon-interstitial (C + I) near the crystallization front in dislocation-free silicon monocrystals grown by float-zone and Czochralski methods. As shown here, the approximate analysis formulas obtained tally with the heterogeneous mechanism of grown-in microdefects formation. PACS Nos.: 61.72Bb, 61.72.Jj, 61.72.Yx