Modeling of transient point defect dynamics in Czochralski silicon crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
2. DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
3. The mechanism of swirl defects formation in silicon
4. The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon Crystals
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