Roles of F and O Radicals and Positive Ions in a SF6/O2 Plasma in Forming Deep Via Structures
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Large-Area Nanopatterning Based on Field Alignment by the Microscale Metal Mask for the Etching Process;ACS Applied Materials & Interfaces;2019-09-07
2. Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11
3. Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process;Microelectronic Engineering;2016-08
4. One-dimensional Ar-SF6 hydromodel at low-pressure in e-beam generated plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-03
5. F and O radicals and ion energy distribution in etching of silicon via hole in a weakly-magnetized, inductively-coupled SF6/O2 plasma;Journal of the Korean Physical Society;2014-11
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