Large-Area Nanopatterning Based on Field Alignment by the Microscale Metal Mask for the Etching Process-Reference-Cited by-同舟云学术

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Large-Area Nanopatterning Based on Field Alignment by the Microscale Metal Mask for the Etching Process

Published:2019-09-07 Issue:39 Volume:11 Page:36177-36185
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Jihye^ORCID,Lee Jun-Young,Yeo Jong-Souk

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b09730

Reference43 articles.

1. Fundamentals of Microfabrication

2. Owa, S.; Nagasaka, H. Immersion Lithography; Its Potential Performance and Issues. In Proceeding of SPIE 5040, Optical Microlithography XVI, 2003; Vol. 5040, pp 724–733.

3. Oizumi, H.; Tanaka, Y.; Kumasaka, F.; Nishiyama, I.; Kondo, H.; Shiraishi, M.; Oshino, T.; Sugisaki, K.; Murakami, K. Lithographic performance of High-Numerical-Aperture (NA= 0.3) EUV Small-Field Exposure Tool (HINA). In 2005 Proceeding of SPIE 5751, Emerging Lithographic Technologies IX, 2005; Vol. 5751, pp 102–109.

4. Imprint Lithography with 25-Nanometer Resolution

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