Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer-Reference-Cited by-同舟云学术

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Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer

Published:2008-04-15 Issue:4 Volume:52 Page:1114-1119
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Hong Hyungseok,Kim Seokhoon,Woo Sanghyun,Kim Hyungchul,Kim Honggyu,Jeong Wooho,Jeon Sunyeol,Bang Seokhwan,Lee Seungjun,Jeon Hyeongtag

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman scattering monitoring of thin film materials for atomic layer etching/deposition in the nano-semiconductor process integration;Chemical Physics Reviews;2023-12-01

2. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

3. Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-09

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