Raman scattering monitoring of thin film materials for atomic layer etching/deposition in the nano-semiconductor process integration

Author:

Kim Jae Bin12ORCID,Kim Dae Sik23ORCID,Kim Jin Seok2ORCID,Choe Jin Hyun2ORCID,Ahn Da Won2ORCID,Jung Eun Su2ORCID,Pyo Sung Gyu2ORCID

Affiliation:

1. Mechatronics R&D Center, Samsung Electronics Co., Ltd 1 . 1-1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea

2. School of Integrative Engineering, Chung-Ang University 2 , Seoul 156-756, South Korea

3. Etch Process Development Team, Applied Materials Korea 3 , 6th FL, Lucestar Biz Bldg., 594-7, Dongtangiheung-ro, Hwaseong-si, Gyeonggi-do 18469, South Korea

Abstract

According to Moore's law, the semiconductor industry is experiencing certain challenges in terms of adapting to highly sophisticated integrated technology. Therefore, controlling materials at the atomic scale is considered a mandatory requirement for further development. To this end, atomic layer deposition and etching skills are being increasingly researched as potential solutions. However, several considerations exist for adopting atomic technology with respect to surface analysis. This review primarily focuses on the use of Raman scattering for evaluating atomic-layered materials. Raman scattering analysis is expected to gradually expand as a semiconductor process and mass-production monitoring technology. As this can enhance the applications of this method, our review can form the basis for establishing Raman scattering analysis as a new trend for atomic-scale monitoring.

Funder

Korea Environmental Industry and Technology Institute

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

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