Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors-Reference-Cited by-同舟云学术

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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Published:2008-07-15 Issue:1 Volume:53 Page:218-222
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Koo Chang Young,Kim Dongjo,Jeong Sunho,Moon Jooho,Park Chiyoung,Jeon Minhyon,Sin Won-Chol,Jung Jinha,Woo Hyun-Jung,Kim Seung-Hyun,Ha Jowoong

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescent and magnetic characteristics of cobalt and manganese doped nanoscale zinc oxide;Journal of Materials Science: Materials in Electronics;2023-07

2. Investigation of time-dependent stability and surface defects in sol–gel derived IGZO and IZO thin films;Journal of Sol-Gel Science and Technology;2021-09-12

3. Effect of excitation wavelength and europium doping on the optical properties of nanoscale zinc oxide;Journal of Materials Science: Materials in Electronics;2020-09-28

4. Simulation of the effect of deep defects created by hydrogen on the performance of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT);Materials Research Express;2019-04-03

5. Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor;Flexible and Printed Electronics;2016-11-01

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