Simulation of the effect of deep defects created by hydrogen on the performance of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT)-Reference-Cited by-同舟云学术

Simulation of the effect of deep defects created by hydrogen on the performance of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT)

Published:2019-04-03 Issue:7 Volume:6 Page:075904
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Labed M,Sengouga N^ORCID,Meftah Af

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/2053-1591/ab11a5/pdf

Reference30 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

3. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

4. Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors

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