Influence of high-k dielectric material on the electrical performance of a-IGZO Thin Film Transistor-Reference-Cited by-同舟云学术

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Influence of high-k dielectric material on the electrical performance of a-IGZO Thin Film Transistor

Published:2022 Issue: Volume:66 Page:3553-3558
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Jain Neeraj,Sharma Shashi Kant,Kumawat Renu,Jain Abhinandan,Lakhawat Sunil

Publisher

Elsevier BV

Subject

General Medicine

Reference21 articles.

1. A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices: ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors;Vyas;Johnson Matthey Technol. Rev.,2020

2. AlGaN/AlN/GaN SG-HEMT as pH detector: A simulation study;Varghese;Mater. Today: Proc.,2021

3. Thin Film Transistor Market – Growth, Trends, Covid-19 Impact, And Forecasts (2022–2027), https://www.mordorintelligence.com/industry-reports/thin-film-transistor-market.

4. Design;Braga,2018

5. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors;Wu;Nanomaterials,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Integration of Field Effect Transistors to Microfluidic Devices;Micromachines;2023-03-31

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