Influence of high-k dielectric material on the electrical performance of a-IGZO Thin Film Transistor-Reference-Cited by-同舟云学术

Influence of high-k dielectric material on the electrical performance of a-IGZO Thin Film Transistor

Published:2022 Issue: Volume:66 Page:3553-3558
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Jain Neeraj,Sharma Shashi Kant,Kumawat Renu,Jain Abhinandan,Lakhawat Sunil

Publisher

Elsevier BV

Subject

General Medicine

Reference21 articles.

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5. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors;Wu;Nanomaterials,2020

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1. Advancements in Metal Oxide Thin Film Quality in Solution-Processed High-κ Dielectrics for High-Performance Transistors;ACS Applied Electronic Materials;2024-03-05

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3. The Integration of Field Effect Transistors to Microfluidic Devices;Micromachines;2023-03-31