Dynamic Characteristics of Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistor Devices and Circuits Fabricated with Precrystallization-Reference-Cited by-同舟云学术

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Dynamic Characteristics of Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistor Devices and Circuits Fabricated with Precrystallization

Published:2008-09-30 Issue:5 Volume:17 Page:461-465
ISSN:1225-8822
Container-title:Journal of the Korean Vacuum Society
language:en
Short-container-title:Journal of the Korean Vacuum Society

Author:

Hwang Wook-Jung,Kang Il-Suk,Kim Young-Su,Yang Jun-Mo,Ahn Chi-Won,Hong Soon-Ku

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO200833338551120.pdf

Reference7 articles.

1. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

2. High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

3. Effects of Mechanical Stress on the Growth Behaviors of Metal-Induced Lateral Crystallization

4. Mechanical stresses upon crystallization in phase change materials

5. Bottom-gated metal-induced laterally crystallized silicon thin-film transistor with self-aligned raised source/drain

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