Anisotropic/Isotropic Atomic Layer Etching of Metals-Reference-Cited by-同舟云学术

Anisotropic/Isotropic Atomic Layer Etching of Metals

Published:2020-05-31 Issue:3 Volume:29 Page:41-49
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Kim Doo San¹,Kim Ju Eun¹,Gill You Jung¹,Jang Yun Jong¹,Kim Ye Eun¹,Kim Kyong Nam²,Yeom Geun Young¹³,Kim Dong Woo¹

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. School of Advanced Materials Science and Engineering, Daejeon University, Daejeon 34520, Republic of Korea

3. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Ministry of Science and ICT, South Korea

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://pdf.medrang.co.kr/ASCT/2020/029/ASCT029-03-01.pdf

Reference34 articles.

1. Overview of atomic layer etching in the semiconductor industry

2. Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

3. Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas

4. Y. Dong, Z. Jiang, and Y. Huang, https://ieeexplore.ieee.org/abstract/document/8369237 Proceedings of the 2018 China Semiconductor Technology International Conference (Shanghai, China, March 11-12, 2018), pp. 1-3

5. Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching

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