Study of GePb photodetectors for shortwave infrared detection-Reference-Cited by-同舟云学术

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Study of GePb photodetectors for shortwave infrared detection

Published:2019-06-13 Issue:13 Volume:27 Page:18038
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Liu Xiangquan,Zheng Jun,Li Xiuli,Liu Zhi,Zuo Yuhua,Xue Chunlai,Cheng Buwen

Funder

Chinese Academy of Sciences

Key Research Program of Frontier Sciences, CAS

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference18 articles.

1. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

2. Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

3. GeSn p-i-n photodetector for all telecommunication bands detection

4. Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection

5. GeSn p-i-n detectors integrated on Si with up to 4% Sn

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy growth and characterization of GePb alloys;Journal of Vacuum Science & Technology B;2024-05-01

2. P–i–n photodetector with active GePb layer grown by sputtering epitaxy;Applied Physics Express;2024-04-01

3. Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth;Journal of Physics D: Applied Physics;2024-03-21

4. High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR;Advanced Optical Materials;2023-06-06

5. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region;Nanomaterials;2023-02-02

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