Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications-Reference-Cited by-同舟云学术

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Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications

Published:2021-04-26 Issue:10 Volume:29 Page:14174
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Jung Yongduck,Kim Youngmin,Burt Daniel,Joo Hyo-Jun,Kang Dong-Ho,Luo Manlin,Chen Melvina,Zhang Lin,Tan Chuan Seng,Nam Donguk

Funder

National Research Foundation Singapore

Ministry of Education

iGrant of Singapore

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference37 articles.

1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

2. Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium

3. Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

4. Analysis of enhanced light emission from highly strained germanium microbridges

5. Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of an on-chip germanium cavity for room-temperature infrared lasing;Optical and Quantum Electronics;2024-08-22

2. Electrically injected GeSn laser with stairs-structure based on SiN stressor;Optics Communications;2023-11

3. Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies;Optics Letters;2023-08-07

4. Lateral Si_0.15Ge_0.85/Ge/Si_0.15Ge_0.85 Double-Heterojunction Laser With SiN Stressor;IEEE Photonics Journal;2023-08

5. Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain;Optics Letters;2023-01-26

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