Study of wet and dry etching processes for antimonide-based photonic ICs

Author:

Arafin ShamsulORCID,McFadden Anthony P.,Paul Banaful,Hasan Syed M. N.,Gupta James A.,Palmstrøm Chris J.,Coldren Larry A.

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Antimonide-based compound semiconductors for electronic devices: A review

2. Performance evaluation of GaSb/AlGaAs based high electron mobility transistors;Mohapatra,2011

3. High-speed and high-power GaSb based photodiode for 2.5 µm wavelength operations;Chao,2016

4. GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions

5. Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-$\mu$m Wavelength Range

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