GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions-Reference-Cited by-同舟云学术

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GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions

Published:2008-08-25 Issue:8 Volume:93 Page:081107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suchalkin Sergey,Jung Seungyong,Kipshidze Gela,Shterengas Leon,Hosoda Takashi,Westerfeld David,Snyder Donald,Belenky Gregory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2974795

Reference8 articles.

1. Physics and technology of mid–infrared light emitting diodes

2. Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-[micro sign]m spectral region

3. Flip-chip LEDs with deep mesa emitting at 4.2 µm

4. Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells

5. Increase in midwave infrared light emitting diode light output due to substrate thinning and texturing

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