Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121670
Reference16 articles.
1. Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
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3. Distributed feedback quantum cascade lasers
4. High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature
5. Continuous wave operation of midinfrared (7.4–8.6 μm) quantum cascade lasers up to 110 K temperature
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2. Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03
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