Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters-Reference-Cited by-同舟云学术

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Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters

Published:2017-03 Issue:2 Volume:35 Page:02B101
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Yu Lan,Zhong Yujun,Dev Sukrith,Wasserman Daniel

Funder

University of Illinois Postdoctoral DRIVE Fellowship

National Science Foundation (NSF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://aip.scitation.org/doi/pdf/10.1116/1.4972978

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced room temperature infrared LEDs using monolithically integrated plasmonic materials;Optica;2020-10-08

2. Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots;Applied Physics Letters;2020-02-10

3. Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic materials;Applied Physics Letters;2020-01-13

4. Next-generation mid-infrared sources;Journal of Optics;2017-11-14

5. New Sources and Sensors for Mid- to Far-IR Optical Sensing;Conference on Lasers and Electro-Optics;2017

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