Compensating film stress in thin silicon substrates using ion implantation-Reference-Cited by-同舟云学术

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Compensating film stress in thin silicon substrates using ion implantation

Published:2019-04-08 Issue:8 Volume:27 Page:11182
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Chalifoux Brandon D.^ORCID,Yao Youwei,Woller Kevin B.,Heilmann Ralf K.^ORCID,Schattenburg Mark L.

Funder

National Aeronautics and Space Administration

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference30 articles.

1. Shaping of thin grazing-incidence reflection grating substrates via magnetorheological finishing

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1. Adjustable X-ray optics: thin-film actuator measurement and figure correction performance;Journal of Astronomical Telescopes, Instruments, and Systems;2024-08-02

2. Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation;Applied Physics Reviews;2024-06-01

3. Ion Implantation-Induced Plastic Phenomena in Metallic Alloys;JOM;2024-03-05

4. Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques;Metrology and Measurement Systems;2023-07-26

5. Analysis of stresses and shape changes in thin substrates with stressed film patterning using femtosecond laser micromachining;Optics & Laser Technology;2023-02

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