Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template-Reference-Cited by-同舟云学术

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Published:2020-06-29 Issue:14 Volume:28 Page:20785
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Monge-Bartolome Laura,Cerba Tiphaine,Díaz-Thomas Daniel A.,Bahriz Michaël,Calvo Marta Rio,Boissier Guilhem,Baron Thierry,Rodriguez Jean-Baptiste,Cerutti Laurent^ORCID,Tournié Eric^ORCID

Funder

H2020 LEIT Information and Communication Technologies

Agence Nationale de la Recherche

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference17 articles.

1. The HITRAN2016 molecular spectroscopic database

2. Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects;Belenky,2013

3. Interband mid-infrared lasers;Cerutti,2020

4. III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

5. Photonic Integration With Epitaxial III–V on Silicon

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