Self-powered UV photodetectors and imaging arrays based on NiO/IGZO heterojunctions fabricated at room temperature

Author:

Wang Mingyang1ORCID,Zhang Jiawei1,Xin Qian1,Yi Lin1,Guo Zhaokun1,Wang Yiming1,Song Aimin12

Affiliation:

1. Shandong University

2. University of Manchester

Abstract

Self-powered UV photodetectors and imaging arrays based on p-type NiO/n-type InGaZnO (IGZO) heterojunctions are fabricated at room temperature by using ratio-frequency magnetron sputtering. The p-n heterojunction exhibits typical rectifying characteristics with a rectification ratio of 7.4×104 at a ±4 V applied bias. A high photo-responsivity of 28.8 mA/W is observed under zero bias at a wavelength of 365 nm. The photodetector possesses a fast response time of 15 ms which is among the best in reported oxide-based p-n junction-based UV photodetectors. Finally, recognition of an “H” pattern is demonstrated by a 10×10 photodetector array at zero bias. The results indicate that the NiO/IGZO based photodetectors may have a great potential in constructing large-scale self-powered UV imaging systems.

Funder

Royal Society

Engineering and Physical Sciences Research Council

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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