A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction-Reference-Cited by-同舟云学术

A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction

Published:2017 Issue:34 Volume:5 Page:8688-8693
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wu Zhenping¹²³⁴^ORCID,Jiao Lei¹²³⁴,Wang Xiaolong¹²³⁴^ORCID,Guo Daoyou¹²³⁴,Li Wenhao¹²³⁴,Li Linghong⁵⁶⁷⁸,Huang Feng⁹¹⁰¹¹¹²¹³^ORCID,Tang Weihua¹²³⁴

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications & School of Science

2. Beijing University of Posts and Telecommunications

3. Beijing 100876

4. China

5. Department of Physics

6. The State University of New York at Potsdam

7. Potsdam

8. USA

9. State Key Laboratory of Optoelectronic Materials and Technologies

10. School of Physics and Engineering

11. Sun Yat-Sen University

12. Guangzhou 510085

13. P. R. China

Abstract

An epitaxial β-Ga₂O₃/Ga:ZnO heterojunction based self-powered DUV photodetector with an excellent wavelength selectivity and a high DUV/visible rejection ratio.

Funder

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01741C

Reference34 articles.

1. New concept ultraviolet photodetectors

2. An invisible metal–semiconductor photodetector

3. Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection

4. A Self-Powered ZnO-Nanorod/CuSCN UV Photodetector Exhibiting Rapid Response

5. Synthesis of two-dimensional β-Ga2O3nanosheets for high-performance solar blind photodetectors

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