On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

Published:2016-05-23 Issue:6 Volume:6 Page:2052
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Mishra Pawan,Janjua Bilal,Ng Tien Khee,Anjum Dalaver H.,Elafandy Rami T.,Prabaswara Aditya,Shen Chao,Salhi Abdelmajid,Alyamani Ahmed Y.,El-Desouki Munir M.,Ooi Boon S.

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate

3. High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Origin of efficiency droop in GaN-based light-emitting diodes

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