Modeling of strain-induced Pockels effect in Silicon-Reference-Cited by-同舟云学术

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Modeling of strain-induced Pockels effect in Silicon

Published:2015-10-23 Issue:22 Volume:23 Page:28649
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Manganelli C. L.,Pintus P.,Bonati C.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca (Italian Ministry of Education, University and Research)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference23 articles.

1. Elastic strain engineering for unprecedented materials properties

2. “Stretching” the energy landscape of oxides—Effects on electrocatalysis and diffusion

3. Ge-on-Si laser operating at room temperature

4. Radiative recombination and optical gain spectra in biaxially strainedn-type germanium

5. Strained silicon as a new electro-optic material

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge_1−xSn_x Microdisks;physica status solidi (RRL) – Rapid Research Letters;2023-11-20

2. A proof of concept of the bulk photovoltaic effect in non-uniformly strained silicon;Journal of Applied Physics;2022-03-28

3. Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo‐Opto‐Mechanical Properties;physica status solidi (a);2021-09-27

4. Robust Geometries for Second-Harmonic-Generation in Microrings Exhibiting a 4-Bar Symmetry;Applied Sciences;2020-12-17

5. Enhancing Pockels effect in strained silicon waveguides;Optics Express;2019-09-11

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