Radiative recombination and optical gain spectra in biaxially strainedn-type germanium-Reference-Cited by-同舟云学术

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Radiative recombination and optical gain spectra in biaxially strainedn-type germanium

Published:2013-06-21 Issue:23 Volume:87 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Virgilio M.,Manganelli C. L.,Grosso G.,Pizzi G.,Capellini G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.87.235313/fulltext

Reference26 articles.

1. Myths and rumours of silicon photonics

2. Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology

3. High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

4. Deformation potential constants of biaxially tensile stressedGeepitaxial films onSi(100)

5. Ge-on-Si laser operating at room temperature

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1. Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures;ACS Applied Electronic Materials;2024-06-06

2. Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors;Materials Science in Semiconductor Processing;2024-06

3. The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge_1−xSn_x Microdisks;physica status solidi (RRL) – Rapid Research Letters;2023-11-20

4. Investigation of lasing in highly strained germanium at the crossover to direct band gap;Physical Review Research;2022-07-18

5. A proof of concept of the bulk photovoltaic effect in non-uniformly strained silicon;Journal of Applied Physics;2022-03-28

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