High-gain 13 μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10 Gb/s-Reference-Cited by-同舟云学术

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High-gain 13 μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10 Gb/s

Published:2014-12-23 Issue:1 Volume:54 Page:46
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Fitsios D.,Giannoulis G.,Korpijärvi V.-M.,Viheriälä J.,Laakso A.,Iliadis N.,Dris S.,Spyropoulou M.,Avramopoulos H.,Kanellos G. T.,Pleros N.,Guina M.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference25 articles.

1. Spectral characteristics of optical pulse amplification in SOA under assist light injection

2. 40-Gb/s Colorless Reflective Amplified Modulator

3. Colorless Optical Transmitter for Upstream WDM PON Based on Wavelength Conversion

4. Dual-Wavelength Bit Input Optical RAM With Three SOA-XGM Switches

5. An 8$\,\times\,$8 InP Monolithic Tunable Optical Router (MOTOR) Packet Forwarding Chip

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3. Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration;Optics Letters;2020-02-12

4. 1.3 µm U-bend traveling wave SOA devices for high efficiency coupling to silicon photonics;Silicon Photonics XIV;2019-03-04

5. Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration;Applied Physics Letters;2018-07-23

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