Fabrication of warm, high CRI white LED using non-cadmium quantum dots
Author:
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
2. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
3. Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
4. Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes
5. Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
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