Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks-Reference-Cited by-同舟云学术

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Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks

Published:2021-08-24 Issue:18 Volume:29 Page:28959
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Burt Daniel,Joo Hyo-Jun,Jung Yongduck,Kim Youngmin,Chen Melvina,Huang Yi-Chiau,Nam Donguk

Funder

iGrant of Singapore

National Research Foundation Singapore

Ministry of Education - Singapore

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference34 articles.

1. Introduction: The Opto-Electronic Integrated Circuit;Soref,2008

2. Energy-Band Structure of Germanium and Silicon: The k·p Method

3. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

4. Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain

5. Ge-on-Si laser operating at room temperature

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain-engineered GeSn microlasers with lithographically adjustable emission wavelengths;Semiconductor Lasers and Laser Dynamics XI;2024-06-20

2. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

3. Actively tunable laser action in GeSn nanomechanical oscillators;Nature Nanotechnology;2024-04-29

4. Mid-infrared Imaging Using Strain-Relaxed Ge_1–xSn_x Alloys Grown on 20 nm Ge Nanowires;Nano Letters;2024-04-12

5. All‐Around HfO₂ Stressor for Tensile Strain in GeSn‐on‐Insulator Nanobeam Lasers;Advanced Optical Materials;2023-09-27

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