Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference34 articles.
1. Material Considerations for Avalanche Photodiodes
2. Why small avalanche photodiodes are beautiful
3. Multiplication noise in uniform avalanche diodes
4. Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
5. Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes
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2. Infrared avalanche photodiodes from bulk to 2D materials;Light: Science & Applications;2023-08-31
3. Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths;IEEE Transactions on Electron Devices;2023-05
4. Design and simulation of InAsBi PIN photodetector for Long wavelength Infrared applications;Materials Today: Proceedings;2022
5. Dark current and 1/f noise in forward biased InAs photodiodes;Semiconductor Physics, Quantum Electronics and Optoelectronics;2021-11-23
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