Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers-Reference-Cited by-同舟云学术

Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers

Published:2020-06-01 Issue:12 Volume:28 Page:18035
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Qiu Xuejiao,Zhang Yonghui^ORCID,Hang Sheng,Gao Yuanbin,Kou Jianquan,Tian Kangkai,Zheng Quan,Li Qing,Zhang Zi-Hui^ORCID

Funder

National Natural Science Foundation of China

Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province

Program for 100-Talent-Plan of Hebei Province

Suzhou Institute of Nanotechnology, Chinese Academy of Sciences

Tunghsu Group and Hebei University of Technology

Graduate Innovation Foundation of Hebei Province

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference33 articles.

1. Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth

2. In-phase supermode operation in GaN-based vertical-cavity surface-emitting laser

3. Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

4. Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

5. Large aperture vertical cavity surface emitting laser with distributed-ring contact

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