Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror-Reference-Cited by-同舟云学术

Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

Published:2018-07-09 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Hamaguchi Tatsushi,Tanaka Masayuki,Mitomo Jugo,Nakajima Hiroshi,Ito Masamichi,Ohara Maho,Kobayashi Noriko,Fujii Kentaro,Watanabe Hideki,Satou Susumu,Koda Rintaro,Narui Hironobu

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-28418-6.pdf

Reference23 articles.

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2. Someya, T. & Arakawa, Y. Highly reflective GaN/Al 0.34 Ga 0.66 N GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition. Appl. Phys. Lett. 73, 3653 (1998).

3. Waldrip, K. E. et al. Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors. Appl. Phys. Lett. 78, 3205 (2001).

4. Lu, T.-C. et al. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature. Appl. Phys. Lett. 97, 071114 (2010).

5. Ikeyama, K. et al. Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors. Appl. Phys. Express 9, 10 (2016).

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