Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates-Reference-Cited by-同舟云学术

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

Published:2022-02-17 Issue:3 Volume:12 Page:1131
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Zhao Yunlong¹,Guo Jia¹,Feifel Markus²,Cheng Hao-Tien³^ORCID,Yang Yun-Cheng⁴,Wang Liming¹,Chrostowski Lukas⁵,Lackner David²,Wu Chao-Hsin³⁴^ORCID,Xia Guangrui (Maggie)¹

Affiliation:

1. the University of British Columbia

2. Fraunhofer Institute for Solar Energy Systems ISE

3. Graduate Institute of Electronics Engineering, National Taiwan University

4. Graduate Institute of Photonics and Optoelectronics, National Taiwan University

5. University of British Columbia

Abstract

High quality 940 nm AlxGa1-xAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology and reasonable periodicity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for larger scale production of AlGaAs-based VCSELs.

Funder

Huawei Technologies

Publisher

Optica Publishing Group

Subject

Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Surface-emitting laser-its birth and generation of new optoelectronics field

2. The role of VCSELs in 3D sensing and LiDAR

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