25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate

Author:

Yang Yun-ChengORCID,Wan Zeyu1ORCID,Hsu Guei-Ting,Chiu Chih-Chuan,Chen Wei-Hsin,Feifel Markus2,Lackner David2,Xia Guangrui(Maggie)1ORCID,Wu Chao-HsinORCID

Affiliation:

1. University of British Columbia

2. Fraunhofer Institute for Solar Energy Systems (ISE)

Abstract

In this Letter, we present a comprehensive analysis of the high-speed performance of 940 nm oxide-confined AlGaAs vertical-cavity surface-emitting lasers (VCSELs) grown on Ge substrates. Our demonstration reveals a pronounced superiority of Ge-based VCSELs in terms of thermal stability. The presented Ge-VCSEL has a maximum modulation bandwidth of 16.1 GHz and successfully realizes a 25 Gb/s NRZ transmission at 85 C. The experimental results underscore the significance and potential of Ge-VCSELs for applications requiring robust performance in high-temperature environments, laying the cornerstone for the future development of VCSEL devices.

Funder

National Science and Technology Council

Chung-Shan Institute of Science and Technology

National Taiwan University

National Taiwan University System (NTUS) Innovation Cooperation

AU Optronics

the University of British Columbia

Center for Quantum Science and Engineering, National Taiwan University

UMC Fellowship

Publisher

Optica Publishing Group

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