Ge_0975Sn_0025 320 × 256 imager chip for 16–19 μm infrared vision-Reference-Cited by-同舟云学术

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Ge_0975Sn_0025 320 × 256 imager chip for 16–19 μm infrared vision

Published:2016-12-13 Issue:36 Volume:55 Page:10170
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Chang Chiao,Li Hui,Ku Chien-Te,Yang Shih-Guo,Cheng Hung Hsiang,Hendrickson Joshua,Soref Richard A.,Sun Greg

Funder

Ministry of Science and Technology, Taiwan (MOST)

U.S. Army

Air Force Office of Scientific Research (AFOSR)

Publisher

The Optical Society

Reference16 articles.

1. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

2. Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

3. High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

4. GeSn p-i-n photodetector for all telecommunication bands detection

5. GeSn p-i-n detectors integrated on Si with up to 4% Sn

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates;Journal of Vacuum Science & Technology B;2024-08-20

2. CMOS-compatible Self-powered Short-wave Infrared Imagers Based on GeSn Photodetector Arrays;ACS Photonics;2024-06-12

3. Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range;Applied Surface Science;2024-06

4. Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition;Journal of Applied Physics;2024-04-25

5. Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers;Journal of Vacuum Science & Technology B;2024-04-17

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