Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode-Reference-Cited by-同舟云学术

Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode

Published:2011-10-31 Issue:23 Volume:19 Page:23111
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Seo Tae Hoon,Lee Kang Jea,Park Ah Hyun,Hong Chang-Hee,Suh Eun-Kyung,Chae Seung Jin,Lee Young Hee,Cuong Tran Viet,Pham Viet Hung,Chung Jin Suk,Kim Eui Jung,Jeon Seong-Ran

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference26 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

3. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

4. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

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