Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations-Reference-Cited by-同舟云学术

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Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations

Published:2015-08-27 Issue:19 Volume:23 Page:A1208
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Jurczak Pamela,Onno Arthur,Sablon Kimberly,Liu Huiyun

Funder

US Army International Technology Center-Atlantic

The Royal Society

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference20 articles.

1. A review of progress in thermophotovoltaic generation of electricityfnafnaI began writing this paper immediately after the Third nrel Conference on Thermophotovoltaic Genertion of materials, devices, and systems; substantial gains in fundamental understanding and performance of the quaternary alloy GaInAsSb; the introduction of new radiator concepts; and more attention being paid to modeling of both real and conceptual systems. There was also further evidence of interest in non-military applications, particularly from the European and Japanese attendees.

2. Band gap dependent thermophotovoltaic device performance using the InGaAs and InGaAsP material system

3. High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems

4. GaxIn1−xAs thermophotovoltaic converters

5. MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion

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3. Air-Bridge Cells for Higher Emission Temperatures;2023 IEEE 50th Photovoltaic Specialists Conference (PVSC);2023-06-11

4. Simulation of edge effects in thermophotovoltaic efficiency by Monte Carlo calculation;AIP Advances;2023-02-01

5. Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting;2021 IEEE Conference on Energy Conversion (CENCON);2021-10-25

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