Optimizing Photovoltaic Efficiency Through Di-Indium Tri-Selenide Thin Film Solar Cells

Abstract

This study focuses on investigating the photovoltaic efficiency of chemically deposited In2Se3 thin films for solar energy conversion. Thin film solar cells have several advantages, including reduced material usage, cost-effectiveness, and the potential for improved efficiency. Our research specifically explores the viability of chemically deposited In2Se3 thin films for converting solar energy into electrical energy through chemical processes. The photovoltaic (PV) cell configuration consists of In2Se3 thin films as the photoanode and a sulfide-polysulphide (0.15 M) solution as the electrolyte. The structure of the cell is n-In2Se3 | NaOH (0.15 M)+ S (0.15 M)+Na2S (0.15 M) |C (graphite). To comprehensively analyze the performance of the thin films, we employ various characterization techniques. These include studying the current-voltage characteristics under both dark and light conditions, capacitance–voltage in the dark, barrier height measurements, power output analysis, photo response evaluation, and spectrum response examinations. Through these analyses, we have discovered that In2Se3 exhibits n-type conductivity. Noteworthy results include a junction ideality factor of 3.43, a flat band potential of −0.680 V, and a barrier height of 0.193 eV. The power output characteristics provide crucial insights into the performance of the PV cell. We measured the open circuit voltage, short circuit current, fill factor, efficiency, and photo response lighted ideality factor, which were found to be 320 mV, 25.4 μA, 36.46%, 0.69%, and 2.56, respectively. This research significantly contributes to our understanding of the photovoltaic efficiency of di-indium tri-selenide thin film solar cells. It offers valuable insights for optimizing their performance in solar energy conversion applications.