Band gap dependent thermophotovoltaic device performance using the InGaAs and InGaAsP material system-Reference-Cited by-同舟云学术

Band gap dependent thermophotovoltaic device performance using the InGaAs and InGaAsP material system

Published:2010-10-15 Issue:8 Volume:108 Page:084516
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tuley R. S.,Nicholas R. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3488903

Reference45 articles.

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3. M. W. Wanlass, T. J. Coutts, J. S. Ward, K. A. Emery, T. A. Gessert, and C. R. Osterwald, Twenty Second Photovoltaic Specialists Conference (IEEE, New York, 1991), Vol. 1, p. 38.

4. Theoretical maximum efficiencies for thermophotovoltaic devices

5. A simple parametric study of TPV system efficiency and output power density including a comparison of several TPV materials

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