Author:
Song Bowen,Shi Bei,Zhu Si,Brunelli Simone Šuran,Klamkin Jonathan
Abstract
InGaAs photodiodes were realized on Si by heteroepitaxy, demonstrating the dark current density of 0.45 mA/cm2, responsivity of 0.7 A/W, bandwidth of 11.2 GHz and 17 years equivalent room-temperature operation.