Fiber laser system of 1550 nm femtosecond pulses with configurable properties for the two-photon excitation of transient currents in semiconductor detectors
Author:
Affiliation:
1. FYLA LASER S.L.
2. CERN
3. TU Dortmund University
4. Albert-Ludwigs-Universität Freiburg
5. Instituto de Física de Cantabria (CSIC-UC)
6. SGIker Laser Facility
7. Escuela Tècnica Superior de Ingenieros
Abstract
Funder
Ministerio de Ciencia e Innovación
Generalitat Valenciana
Bundesministerium für Bildung und Forschung
Horizon 2020 Framework Programme
Publisher
Optica Publishing Group
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Reference34 articles.
1. A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique
2. Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors
3. Determination of effective trapping times for electrons and holes in irradiated silicon
4. TCT characterization of different semiconductor materials for particle detection
5. Investigation of Irradiated Silicon Detectors by Edge-TCT
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2. Influence of temperature on measurements of the Two Photon Absorption – Transient Current Technique in silicon planar detectors using a 1550 nm femtosecond fibre laser;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-08
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