Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode-Reference-Cited by-同舟云学术

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode

Published:2012-05-02 Issue:10 Volume:20 Page:11321
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Chen Chih-Yen,Hsieh Chieh,Liao Che-Hao,Chung Wei-Lun,Chen Hao-Tsung,Cao Wenyu,Chang Wen-Ming,Chen Horng-Shyang,Yao Yu-Feng,Ting Shao-Ying,Kiang Yean-Woei,Yang Chih-Chung (C. C.),Hu Xiaodong

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference38 articles.

1. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

2. Determination of photoluminescence mechanism in InGaN quantum wells

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

5. Reduced injection current induced blueshift in an InGaN∕GaN quantum-well light-emitting diode of prestrained growth

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